Chip Designing interview questions

39 questions. Tap “Show answer” to check yourself.

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  1. What are the limitations in increasing the power supply to reduce delay?

  2. Given a layout, draw its transistor level circuit. (I was given a 3 input AND gate and a 2 input Multiplexer. You can expect any simple 2 or 3 input gates)

  3. Draw Vds-Ids curve for a MOSFET. Now, show how this curve changes (a) with increasing Vgs (b) with increasing transistor width (c) considering Channel Length Modulation

  4. Draw the timing diagram for a SRAM Read. What happens if we delay the enabling of Clock signal?

  5. What happens to delay if you increase load capacitance?

  6. Why do we gradually increase the size of inverters in buffer design? Why not give the output of a circuit to one large inverter?

  7. Draw the Differential Sense Amplifier and explain its working. Any idea how to size this circuit? (Consider Channel Length Modulation)

  8. What happens if we use an Inverter instead of the Differential Sense Amplifier?

  9. Draw the stick diagram of a NOR gate. Optimize it

  10. Describe the various effects of scaling

  11. What would you do in order to not use certain cells from the library?

  12. Give the expression for calculating Delay in CMOS circuit

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  14. Why don?t we use just one NMOS or PMOS transistor as a transmission gate?

  15. How can you model a SRAM at RTL Level?

  16. What happens if we increase the number of contacts or via from one metal layer to the next?

  17. For a NMOS transistor acting as a pass transistor, say the gate is connected to VDD, give the output for a square pulse input going from 0 to VDD

  18. Draw a transistor level two input NAND gate. Explain its sizing (a) considering Vth (b) for equal rise and fall times

  19. What is Noise Margin? Explain the procedure to determine Noise Margin

  20. What?s the difference between Testing & Verification?

  21. Draw a 6-T SRAM Cell and explain the Read and Write operations

  22. Let A & B be two inputs of the NAND gate. Say signal A arrives at the NAND gate later than signal B. To optimize delay, of the two series NMOS inputs A & B, which one would you place near the output?

  23. For an AND-OR implementation of a two input Mux, how do you test for Stuck-At-0 and Stuck-At-1 faults at the internal nodes? (You can expect a circuit with some redundant logic)

  24. Give a big picture of the entire SRAM Layout showing your placements of SRAM Cells, Row Decoders, Column Decoders, Read Circuit, Write Circuit and Buffers

  25. Give the logic expression for an AOI gate. Draw its transistor level equivalent. Draw its stick diagram

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  27. Draw a CMOS Inverter. Explain its transfer characteristics

  28. You have three adjacent parallel metal lines. Two out of phase signals pass through the outer two metal lines. Draw the waveforms in the center metal line due to interference. Now, draw the signals if the signals in outer metal lines are in phase with eac

  29. Draw the SRAM Write Circuitry

  30. What happens to delay if we include a resistance at the output of a CMOS circuit?

  31. In the design of a large inverter, why do we prefer to connect small transistors in parallel (thus increasing effective width) rather than lay out one transistor with large width?

  32. What are various techniques to resolve congestion/noise?

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